Atomic layer etching of Si(100) and Si(111) using Cl2 and Ar neutral beam

Electrochemical and Solid-State Letters

Volumn 8, Issue 8, 2005, Pages

  Park, S D ^a   Lee, D H ^a   Yeom, G Y ^a,b  

^a Sungkyunkwan University   (South Korea)

^b National Program for Tera Level Devices   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISORPTION; CHLORINE; ETCHING; ISOTHERMS; MONOLAYERS;

ATOMIC LAYER ETCHING; LANGMUIR ISOTHERM; SELF-LIMITED ETCHING; SILICON CHLORIDE;

SILICON;

EID: 24344448565     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1938848     Document Type: Article

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