Investigation of etching and deposition processes of Cl2/O 2/Ar inductively coupled plasmas on silicon by means of plasma-surface simulations and experiments

Journal of Physics D: Applied Physics

Volumn 42, Issue 9, 2009, Pages

  Tinck, S ^a   Boullart, W ^b   Bogaerts, A ^a  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHAMBER PRESSURES; DEPOSITION PROCESS; ELECTRONIC DEVICES; ETCH RATES; GAS COMPOSITIONS; HYBRID PLASMA EQUIPMENT MODELS; MONTE CARLO SIMULATIONS; OPERATING CONDITIONS; PLASMA CHARACTERISTICS; PLASMA SPECIES; POWER DEPOSITIONS; REACTOR CHAMBERS; SHALLOW TRENCH ISOLATIONS; SI SUBSTRATES; SIMULATION METHODS; SUBSTRATE BIAS; SURFACE PROCESS; SURFACE SIMULATIONS;

CHLORINE; ETCHING; INDUCTIVELY COUPLED PLASMA; MONTE CARLO METHODS; MOSFET DEVICES; OXYGEN; PHOTORESISTS; PLASMA DEPOSITION; SILICON; SYSTEMS ENGINEERING;

SUBSTRATES;

EID: 65449147563     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/9/095204     Document Type: Article

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