Molecular dynamics simulations of reactive etching of SiC by energetic fluorine

Applied Physics A: Materials Science and Processing

Volumn 88, Issue 2, 2007, Pages 385-390

  Gou, F ^a   Chen, L Z T ^a   Meng, C ^a   Qian, Q ^a  

^a School of Electronic Science and Information Technology   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FLUORINE; MOLECULAR DYNAMICS; REACTIVE ION ETCHING;

ENERGETIC FLUORINE; ETCH PRODUCTS; INTERFACIAL LAYER;

SILICON CARBIDE;

EID: 34250641998     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-007-3993-x     Document Type: Article

References (37)

1. R.W. Keyes, in Silicon Carbide 1973, ed. by R.C. Marshall, J.W. Faust, C.E. Ryan (University of South Carolina Press, Columbia, SC. 1974), pp. 534-541
2. A. Suzuki, M. Ikeda, N. Nagao, H. Matsunami, T. Tanaka, J. Appl. Phys. 47, 4546 (1976)
3. B. Kim, S.M. Kong, B.T. Lee, J. Vac. Sci. Technol. A 20, 146 (2002)
4. J.W. Palmour, H.S. Kong, R.F. Davis, J. Appl. Phys. 64, 2168 (1988)
5. Z. Feng, S. Anders, A. Anders, J. Ager, I. Brown, K. Komvopoulos, D. Bogy, Diam. Relat. Mater. 5, 1080 (1996)
6. M. Badila, J. Chante, M. Locatelli, J. Millan, P. Godignon, G. Brezeanu, B. Tudor, A. Lebedev, Diam. Relat. Mater. 8, 341 (1999)
7. L. Jiang, R. Cheung, M. Hassan, A. Harris, J. Burdess, C. Zoman, M. Mehregany, J. Vac. Sci. Technol. B 21, 2998 (2003)
8. B. Kim, B. Lee, J. Electron. Mater. 33, 1308 (2004)
9. P.H. Yih, V. Saxena, A. Steckl, Phys. Stat. Solidi B 202, 605 (1997)
10. N.J. Dartnell, M.C. Flowers, R. Greef, J. Zhu, A. Blackburn, Vacuum 46, 349 (1995)
11. J.J. Wang, E.S. Lambers, S.J. Pearton, M. Ostling, C.M. Zetterling, J.M. Grow, F. Ren, Solid State Electron. 42, 743 (1998)
12. J.D. Scofield, B.N. Ganguly, P. Bletzinger, J. Vac. Sci. Technol. A 18, 2175 (2000)
13. N. Plank, M. Blauw, E. van der Drift, R. Cheung, J. Phys. D Appl. Phys. 36, 482 (2003)
14. N.V. Edwards, K. Jarrendahl, D.E. Aspnes, K. Robbie, G.D. Powell, C. Cobet, N. Esser, W. Richter, L.D. Madsen, Surf. Sci. 464, L703 (2000)
15. M. von Gradowski, B. Jacoby, H. Hilgers, J. Barz, M. Wahl, M. Kopnai-ski, Surf. Coat. Technol. 200, 334 (2005)
16. J.W. Coburn, J. Vac. Sci. Technol. A 4, 1830 (1986)
17. J.W. Coburn, J. Vac. Sci. Technol. A 12, 1417 (1994)
18. J.W. Coburn, Phys. Scripta T 23, 258 (1988)
19. J.P. Chang, J.W. Coburn, J. Vac. Sci. Technol. A 21, 145 (2003)
20. B.A. Helmer, D.B. Graves, J. Vac. Sci. Technol. A 15, 2252 (1997)
21. J. Tanaka, C.F. Abrams, D.B. Graves, J. Vac. Sci. Technol. A 18, 938 (2000)
22. M.E. Barone, D.B. Graves, J. Appl. Phys. 78, 6604 (1995)
23. C.F. Abrams, D.B. Graves, J. Appl. Phys. 86, 5938 (1999)
24. V.V. Smirnov, A.V. Stengach, K.G. Gaynullin, V.A. Pavlovsky, S. Rauf, P. Stout, P.L.G. Ventzek, J. Appl. Phys. 97, 093302 (2005)
25. F. Gou, Q. Xie, L. Zhu, S. Weili, X. Ming, Nucl. Instrum. Methods B 248, 113 (2006)
26. M.P. Allen, D.J. Tildesley, Computer Simulation of Liquids (Oxford Science, New York, 1987)
27. D. Humbird, D.B. Graves, J. Chem. Phys. 120, 2405 (2004)
28. J. Tersoff. Phys. Rev. B 39, 5566 (1989)
29. F. Gao, W.J. Weber, Phys. Rev. B 63, 054101 (2001)
30. F. Gou, L.Z.T. Chen, C.L. Meng, Q. Qian, submitted to Thin Solid Films (2006)
31. G. Ecke, R. Kosiba, V. Kharlamov, Y. Trushin, J. Pezoldt, Nucl. Instrum. Methods B 196, 39 (2002)
32. H.J.C. Berendsen, J.P.M. Postma, W.F. Vangunsteren, A. Dinola, J.R. Haak, J. Chem. Phys. 81, 3684 (1984)
33. J.R. Engstrom, M.M. Nelson, T. Engel, Surf. Sci. 215, 437 (1989)
34. K. Kurihara, A. Egami, M. Nakamura, J. Vac. Sci. Technol. A 24, 286 (2006)
35. H.F. Winters, J. Vac. Sci. Technol. B 1, 927 (1983)
36. J. Sugiura, W.J. Lu, K.C. Cadien, A.J. Steckl, J. Vac. Sci. Technol. B 4, 349 (1986)
37. H. Toyoda, H. Morishima, R. Fukute, Y. Hori, I. Murakami, H. Sugai, J. Appl. Phys. 95, 5172 (2004)