Molecular dynamics simulations of direct reactive ion etching: surface roughening of silicon by chlorine

IEEE Transactions on Plasma Science

Volumn 24, Issue 1, 1996, Pages 77-78

  Barone, M E ^a   Robinson, T O ^a   Graves, D B ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; COMPUTER SIMULATION; MOLECULAR DYNAMICS; PLASMA ETCHING; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; SURFACES;

CHLORINATED SURFACE; SILICON SURFACE;

REACTIVE ION ETCHING;

EID: 0030082185     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.491699     Document Type: Article

References (7)

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4. H. Feil, J. Dieleman, and B. J. GarrisonChemical sputtering of Si related to roughness formation of a Cl-passivated Si surface," J. Appl. Phys., vol. 74, no. 2, pp. 1303-1309, 1993.
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6. W. BethelBivar," submitted to Int. AVS Ctr., 1991.
7. M. ConnollyQuantum chemistry program exchange number 429: Molecular surface program," calculations performed via AVS Chemistry Viewer, ver. 1.5, Molecular Simulations, Inc., Burlington, MA, 1992.