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Volumn 97, Issue 1-3, 1997, Pages 140-150

Reactive ion etching for high aspect ratio silicon micromachining

Author keywords

Lithography; MEMS; RIE

Indexed keywords

ANISOTROPY; ASPECT RATIO; ION BEAM LITHOGRAPHY; MICROELECTROMECHANICAL DEVICES; MICROELECTRONIC PROCESSING; MICROMACHINING; QUARTZ; SEMICONDUCTING SILICON; SUBSTRATES;

EID: 0031359494     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(97)00284-3     Document Type: Article
Times cited : (33)

References (18)
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  • 8
    • 0026185799 scopus 로고
    • Simulation of RIE-processes considering sheath dynamics
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    • Fichelscher, A.1    Rangelow, I.W.2    Kassing, R.3
  • 9
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    • Influence of sheath properties on the profile evolution in RIE-processes
    • Proc. Microelectronic Processing Integration, 30 Sept.-5 Oct., Santa Clara CA, USA
    • A. Fichelscher, I.W. Rangelow, A. Stamm, Influence of sheath properties on the profile evolution in RIE-processes, in: Proc. Microelectronic Processing Integration, 30 Sept.-5 Oct., Santa Clara CA, USA, in: SPIE 1392 (1990) 77-83.
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    • I.W. Rangelow, P. Thoren, K. Masseli, R. Kassing, M. Engel-hardt, S. Schwarzl, Secondary effects of single crystalline silicon deep-trench-etching in a chlorine-containing plasma for 3-dimensional capacitor cells, Microelectron. Eng. 5 (1986) 387-394.
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    • Rangelow, I.W.1    Thoren, P.2    Masseli, K.3    Kassing, R.4    Engel-hardt, M.5    Schwarzl, S.6
  • 12
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    • Reactive ion etching for MEMS fabrication
    • I.W. Rangelow, H. Löschner, Reactive ion etching for MEMS fabrication, J. Vac. Sci. Technol. B 13 (6) (1995) 2394-2399.
    • (1995) J. Vac. Sci. Technol. B , vol.13 , Issue.6 , pp. 2394-2399
    • Rangelow, I.W.1    Löschner, H.2
  • 13
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    • The reaction of fluorine atoms with silicon
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.