Molecular dynamics simulation of Si etching by off-normal Cl+ bombardment at high neutral-to-ion flux ratios

Japanese Journal of Applied Physics

Volumn 47, Issue 11, 2008, Pages 8560-8564

  Iwakawa, Akira ^a   Nagaoka, Tatsuya ^a   Ohta, Hiroaki ^a,b   Eriguchi, Koji ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

^b University of California   (United States)

Author keywords

Angular dependency; Molecular dynamics simulation; Plasma surface interaction; Reactive ion etching

Indexed keywords

ANGULAR DISTRIBUTION; ATOMIC PHYSICS; CHLORINE; DYNAMICS; ETCHING; IONS; MOLECULAR DYNAMICS; MOLECULAR MECHANICS; PLASMA ETCHING; PLASMA INTERACTIONS; PLASMAS; REACTION KINETICS; SILICON; STOICHIOMETRY; TOKAMAK DEVICES;

ANGULAR DEPENDENCY; ETCHING CHARACTERISTICS; ETCHING CONDITIONS; INCIDENT ANGLES; ION FLUXES; MOLECULAR DYNAMICS SIMULATION; MOLECULAR DYNAMICS SIMULATIONS (MDS); PHYSICAL SPUTTERING; PLASMA-SURFACE INTERACTION; REACTION LAYERS; SI ATOMS; SILICON (SI) ETCHING; YIELD CURVE;

REACTIVE ION ETCHING;

EID: 58749096367     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8560     Document Type: Article

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