Line-edge-roughness transfer during plasma etching: Modeling approaches and comparison with experimental results

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 8, Issue 4, 2009, Pages

  Constantoudis, Vassilios ^a   Kokkoris, George ^a   Xydi, Panagiota ^a   Gogolides, Evangelos ^a   Pargon, Erwine ^b   Martin, Mickaël ^b  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b CNRS   (France)

Author keywords

Etching; Metrology; Microlithography; Microscopy; Plasmas; Roughness

Indexed keywords

ANISOTROPY; ELECTRON BEAM LITHOGRAPHY; PHOTORESISTS; PLASMA ETCHING; PLASMAS; ROUGHNESS MEASUREMENT; SOIL STRUCTURE INTERACTIONS; TRIMMING;

ANISOTROPIC PLASMA ETCHING; CORRELATION LENGTHS; LINE EDGE ROUGHNESS; LINEWIDTH ROUGHNESS; MODELING APPROACH; NANOPROTRUSIONS; ROUGHNESS EXPONENT; TRIMMING PROCESS; UNDERLAYERS;

ANISOTROPIC ETCHING;

EID: 77953523208     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.3268365     Document Type: Conference Paper

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