Advances in CD-AFM scan algorithm technology enable improved CD metrology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6518, Issue PART 3, 2007, Pages

  Mininni, Lars ^a   Foucher, Johann ^b   Faurie, Pascal ^b  

^a VEECO INSTRUMENTS INC   (United States)

^b CEA LETI   (France)

Author keywords

Accuracy; AFM; Bottom CD; Critical dimension; LER; LWR; Metrology

Indexed keywords

LINE EDGE ROUGHNESS; LINE WIDTH ROUGHNESS; SCATTEROMETRY; VERSATILE METROLOGY TECHNIQUE;

ALGORITHMS; ATOMIC FORCE MICROSCOPY; MICROELECTRONIC PROCESSING; PROCESS ENGINEERING; SCANNING ELECTRON MICROSCOPY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 35148851139     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.713353     Document Type: Conference Paper

References (5)

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3. B.C. Perng, et al., "Accurate In-Line CD Metrology for Nanometer Semiconductor Manufacturing", Proc. SPIE 2006, Vol. 6152, p. 246-254.
4. V. A. Ukraintsev, "A Comprehensive Test of Optical Scatterometry Readiness for 65nm Technology Production", Proc. SPIE 2006, Vol. 6152.
5. V.A. Ukraintsev, "The Role of AMF in Semiconductor Technology Development: the 65nm Technology Node and Beyond", Proc. SPIE 2005, Vol. 5752.