Influence of line edge roughness on MOSFET devices with sub-50nm gates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 2, 2004, Pages 865-873

  Shibata, K ^a   Izumi, N ^a   Tsujita, K ^a  

^a NONE

Author keywords

Autocorrelation function; Drive current (Ion); Fluctuation; Gate; Line edge roughness (LER); MOSFET; Off state leakage (Ioff); Period; Threshold voltage (Vth)

Indexed keywords

AUTOCORREALTION FUNCTION; DRIVE CURRENT (ION); FLUCTUATION; LINE EDGE ROUGHNESS (LER);

DEFECTS; GATES (TRANSISTOR); LEAKAGE CURRENTS; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; STATISTICAL METHODS; SURFACE ROUGHNESS; THRESHOLD VOLTAGE; TRANSISTORS;

MOSFET DEVICES;

EID: 4344658756     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.534508     Document Type: Conference Paper

References (13)

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