Comparison of trimming techniques for sub-lithographic silicon structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 B, 2006, Pages 5552-5555

  Dreeskornfeld, L ^a   Graham, A P ^a   Hartwich, J ^a   Kretz, J ^a   Landgraf, E ^a   Lutz, T ^a   Rosner W ^a   Specht, M ^a   Risch, L ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Electron beam lithography; Nano devices; Plasma etching; Resist trimming

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; HYDROFLUORIC ACID; NANOSTRUCTURED MATERIALS; PHOTORESISTORS; PLASMA ETCHING; TRIMMING;

NANO DEVICES; RESIST TRIMMING; SACRIFICIAL OXIDATION; TETRAETHYLORTHOSILICATE (TEOS) HARD-MASKS;

SEMICONDUCTING SILICON;

EID: 33745639222     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.5552     Document Type: Review

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