Fractal dimension of line width roughness and its effects on transistor performance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6922, Issue , 2008, Pages

  Constantoudis, V ^a   Gogolides, E ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CD VARIATION; CORRELATION LENGTHS; FRACTALITY; GATE LENGTH; GATE WIDTHS; LINEWIDTH ROUGHNESS; LOW CORRELATION; OFF CURRENT; OFF-STATE CURRENT; ROUGHNESS EXPONENT; SEMICONDUCTOR INDUSTRY; STANDARD DEVIATION; TRANSISTOR OPERATION; TRANSISTOR PERFORMANCE;

CORRELATION METHODS; PARTIAL DISCHARGES; PROCESS CONTROL; ROUGHNESS MEASUREMENT; SEMICONDUCTOR DEVICE MANUFACTURE; SOIL STRUCTURE INTERACTIONS; TRANSISTORS; UNITS OF MEASUREMENT;

FRACTAL DIMENSION;

EID: 79956116771     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.791850     Document Type: Conference Paper

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