Simulation of the combined effects of polymer size, acid diffusion length and EUV secondary electron blur on resist line-edge roughness

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 2, 2007, Pages

  Drygianakis, D ^a   Nijkerk, M D ^b   Patsis, G P ^a   Kokkoris, G ^a   Raptis, I ^a   Leunissen, L H A ^c   Gogolides, E ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b TNO   (Netherlands)

^c IMEC   (Belgium)

Author keywords

Etching; EUV; LER; Lithography; Pattern transfer of LER; Process simulation; Resists; Shot noise

Indexed keywords

PATTERN TRANSFER OF LER; PROCESS SIMULATION;

COMPUTER SIMULATION; DETERIORATION; ETCHING; EXTREME ULTRAVIOLET LITHOGRAPHY; POLYMERIZATION; SHOT NOISE; SURFACE ROUGHNESS; SYSTEMS ANALYSIS;

POLYMERS;

EID: 35148847392     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.708847     Document Type: Conference Paper

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