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Volumn 157, Issue 5, 2010, Pages

Electrical and bias temperature instability characteristics of n-type field-effect transistors using HfOx Ny gate dielectrics

(13) Jung, Hyung Suk a,b Kim, Hyo Kyeom a Kim, Jeong Hwan a Won, Seok Jun a Cho, Deok Yong a Lee, Joohwi a Lee, Sang Young a Hwang, Cheol Seong a Park, Jung Min b Kim, Weon Hong b Song, Min Woo b Lee, Nae In b Heo, Sung c

a Seoul National University (South Korea)

b SAMSUNG Electronics (South Korea)

c Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BAND GAPS; BIAS TEMPERATURE INSTABILITY; DIELECTRIC CONSTANTS; ELECTRON HOLE PAIRS; EQUIVALENT OXIDE THICKNESS; GATE STRESS; HOLE TRAPPING; IN-SITU; INTERFACE TRAP DENSITY; INTERFACE TRAP GENERATION; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NMOSFET; PHYSICAL THICKNESS; POSITIVE BIAS TEMPERATURE INSTABILITIES; SURFACE PLASMONS; TRAP SITES;

DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; NITROGEN PLASMA; OXIDE FILMS; PLASMA DIAGNOSTICS; PLASMA STABILITY;

HAFNIUM COMPOUNDS;

EID: 77951173040 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3332778 Document Type: Article

Times cited : (19)

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