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Volumn 109, Issue 9, 2009, Pages 1183-1188
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Bandgap measurement of thin dielectric films using monochromated STEM-EELS
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Author keywords
a SiNx; AES; Bandgap measurement; Charge trap memory; EELS; Monochromtor; REELS; SiO2; STEM
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Indexed keywords
A-SINX;
AES;
BANDGAP MEASUREMENT;
CHARGE TRAP MEMORY;
EELS;
MONOCHROMTOR;
SIO2;
STEM;
AUGER ELECTRON SPECTROSCOPY;
CHARGE TRAPPING;
DIELECTRIC DEVICES;
DIELECTRIC FILMS;
ELECTRON ENERGY ANALYZERS;
ELECTRON SCATTERING;
ELECTRONS;
ENERGY GAP;
MONOCHROMATORS;
REELS;
SILICON COMPOUNDS;
TRANSMISSION ELECTRON MICROSCOPY;
ELECTRON ENERGY LOSS SPECTROSCOPY;
SILICON DIOXIDE;
ARTICLE;
AUGER ELECTRON SPECTROSCOPY;
CONTROLLED STUDY;
ELECTRON ENERGY LOSS SPECTROSCOPY;
FILM;
INTERMETHOD COMPARISON;
RELIABILITY;
SCANNING TRANSMISSION ELECTRON MICROSCOPY;
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EID: 67650686801
PISSN: 03043991
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ultramic.2009.04.005 Document Type: Article |
Times cited : (84)
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References (27)
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