Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

Solid-State Electronics

Volumn 43, Issue 1, 1999, Pages 57-63

  Kim, Jong Hyun ^a   Sanchez, Julian J ^a   DeMassa, Thomas A ^a   Quddus, Mohammed T ^a   Grondin, Robert O ^a   Liu, Chuan H ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8444224965     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00196-8     Document Type: Article

References (36)

1. Chen IC, Holland S, Hu C. IEEE Trans Electron Devices 1985;32:413.
2. Holland S, Chen IC, Ma TP, Hu C. IEEE Trans Electron Devices Lett 1984;5:302.
3. Chen CF, Wu CY. Solid-St Electr 1986;29:1059.
4. Fischetti MV, Weinberg ZA, Calise JA. J Appl Phys 1985;57:418.
5. Fischetti MV. In: Simonne JJ, editor. Insulating films on semiconductors, Amsterdam: North-Holland, 1986: 186.
6. Fischetti MV. Phys Rev B 1985;31:2099.
7. Tsui DC. Phys Rev Lett 1969;22:293.
8. Tsui DC, Barker AS, Jr. Phys Rev 1969;186:590.
9. Duke CB. Phys Rev 1969;186:588.
10. Duke CB, Rice MJ, Steinrisser F. Phys Rev 1969;181:733.
11. Ngai KL, Economou EN. Phys Rev B 1971;4:2132.
12. Ngai KL, Economou EN, Cohen MH, Fischetti MV. Phys Rev Lett 1969;22:1375.
13. Fischetti MV, DiMaria DJ, Brorson SD, Theis TN, Kirtley JR. Phys Rev Lett 1985;31:8124.
14. Smith RA. Wave Mechanics of Crystalline Solids, 1969:41.
15. Kittel C. Introduction to Solid State Physics, 6th edn. 1986:100.
16. Schilling J. Z Phys B 1976;25:61.
17. Raether H. In: Höhler G, editor. Surface Plasmons, New York: Springer-Verlag, 1988.
18. Raether H. In: Höhler G, editor. Excitation of Plasmons and Interband Transitions by Electrons, New York: Springer-Verlag, 1980.
19. Lyon KG, Salinger GL, Swenson CA. J Appl Phys 1977;48:865.
20. Ibach H. Phys Status Solidi 1969;31:625.
21. Okaji M. Int J Thermophys 1988;9:1101.
22. Platzman PM, Wolff PA. Waves and Interactions in Solid State Plasmas. New York: Academic Press, 1973:14.
23. Kim J-H. Ph.D. dissertation, Chaps 6 and 7:1995.
24. Gong SS, Burnham ME, Theodore ND, Schroder DK. IEEE Trans Electron Devices 1993;40:1251.
25. Fontanella J, Johnstone RL, Sigel GH, Jr, Andeen C. J Non-Cryst Solids 1979;31:401.
26. Tan C, Arndt J. J Non-Cryst Solids 1994;169:143.
27. Wolters DR, Zeegers-van Duijnhoven ATA. Ext Abs Mtg of Electrochem Soc 1990:272.
28. Modelli A, Ricco B. IEDM Tech. Dig 1984:148.
29. Tatsuuma K, Sugimoto M, Ajiki T. Symp. on VLSI Tech 1988:43.
30. DiMaria DJ, Cartier E, Arnold D. J Appl Phys 1993;73:3367.
31. Kubota T, Apte P, Saraswat KC, 1992 ECS Spring Meeting Extended Abstracts, Princeton, NJ, 1992:424.
32. Schuegraf KF, Hu C, Int Reliability Phys Symp 1994:126.
33. Satake H, Toriumi A. Appl Phys Lett 1995;66(25):3516.
34. Lu Y, Sah CT. J Appl Phys 1994;76:4724.
35. Weinberg ZA, Fischetti MV, Nissan-Cohen Y. J Appl Phys 1986;59:824.
36. Kim JH, Sanchez JJ, DeMassa TA, Quddus MT., Smith D, Shaapur F, Liu CH. J Appl Phys. In press.