Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment

Applied Physics Letters

Volumn 88, Issue 20, 2006, Pages

  Cho, M H ^a   Chung, K B ^a   Whang, C N ^b   Ko, D H ^b   Lee, J H ^c   Lee, N I ^c  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Yonsei University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; SEMICONDUCTING FILMS; SILICON; SURFACE CHEMISTRY; THERMAL EFFECTS;

ANNEALING TEMPERATURE; CORE-LEVEL ENERGY STATE; NITRIDATION;

HAFNIUM COMPOUNDS;

EID: 33646864617     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2202390     Document Type: Article

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