Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

Applied Physics Letters

Volumn 86, Issue 17, 2005, Pages 1-3

  Houssa, M ^a   Aoulaiche, M ^a,b   Van Elshocht, S ^a   De Gendt, S ^a   Groeseneken, G ^a   Heyns, M M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC FIELDS; HAFNIUM COMPOUNDS; HYDROGEN; INTERFACES (MATERIALS); MOSFET DEVICES; PROTONS; SILICA; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DENSITY OF HOLES; EQUIVALENT OXIDE THICKNESS (EOT); NAGATIVE BIAS TEMPERATURE INSTABILITIES (NBTI); STRESS TIME;

GATES (TRANSISTOR);

EID: 20844447318     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1915513     Document Type: Article

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