Reduced electrical defects and improved reliability of atomic-layer- deposited HfO2 dielectric films by in Situ NH3 injection

Journal of the Electrochemical Society

Volumn 156, Issue 5, 2009, Pages

  Kim, Jeong Hwan ^a   Park, Tae Joo ^a   Cho, Moonju ^a   Jang, Jae Hyuck ^a   Seo, Minha ^a   Na, Kwang Duk ^a   Hwang, Cheol Seong ^a   Won, Jeong Yeon ^b  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DIELECTRIC FILMS; HAFNIUM COMPOUNDS; OXYGEN; OXYGEN VACANCIES; RELIABILITY; SILICON NITRIDE; THERMODYNAMIC STABILITY;

ATOMIC LAYERS; ATOMIC-LAYER-DEPOSITED; BREAKDOWN FIELDS; CARBON CONTENTS; CONSTANT VOLTAGE STRESS; ELECTRICAL CONDUCTIONS; ELECTRICAL DEFECTS; FLAT-BAND VOLTAGE SHIFTS; IMPROVED RELIABILITIES; IN-SITU; INTERFACE TRAPS; INTERFACIAL LAYERS; LEAKAGE CURRENT DENSITIES; NITROGEN CONTENTS; RESIDUAL CARBONS; THERMAL STABILITIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 63649155691     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3098978     Document Type: Article

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