Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling

Microelectronics Reliability

Volumn 47, Issue 6, 2007, Pages 880-889

  Houssa, M ^a,b   Aoulaiche, M ^a,b   De Gendt, S ^a,b   Groeseneken, G ^a,b   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; GATE DIELECTRICS; MATHEMATICAL MODELS; PROTON TRANSFER; SURFACE DEFECTS; THERMODYNAMIC STABILITY;

ELECTRICAL CHARACTERIZATION; GATE STACKS; N-RELATED DEFECTS; NEGATIVE BIAS TEMPERATURE INSTABILITIES (NBTI);

MOSFET DEVICES;

EID: 34247868948     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.10.010     Document Type: Article

References (45)

1. Wilk G.D., Wallace R.M., and Anthony J.M. J Appl Phys 87 (2000) 484
2. For a recent review, see. In: Houssa M. (Ed). High-κ gate dielectrics (2004), IOP, London
3. Visokay M.R., Chambers J.J., Rotondaro A.L.P., Shanware A., and Colombo L. Appl Phys Lett 80 (2002) 3183
4. Koyama M., Kamimuta Y., Ino T., Kaneko A., Inumiya S., Eguchi K., et al. IEDM techn dig (2004), IEEE, New Jersey p. 499
5. Watanabe T., Takayanagi M., Kojima K., Sekine K., Yamasaki H., Eguchi K., et al. IEDM tech dig (2004), IEEE, NJ p. 507
6. Tseng H.H., Capasso C.C., Schaeffer J.K., Hebert E.A., Tobin P.J., Gilmer D.C., et al. IEDM tech dig (2004), IEEE, NJ p. 821
7. Callegari A., Jamison P., Cartier E., Zafar S., Gusev E., Narayanan V., et al. IEDM tech dig (2004), IEEE, NJ p. 825
8. Lebedinskii Yu.Yu., Zenkevich A., Gusev E.P., and Gribelyuk M. Appl Phys Lett 86 (2005) 191904
9. Schroder D.K., and Babcock J.A. J Appl Phys 94 (2003) 1
10. Onishi K., Choi R., Kang C.S., Cho H.J., Kim Y.H., Nieh R.E., et al. IEEE Trans Electron Dev 50 (2003) 1517
11. Zafar S., Lee B.H., Stathis J.H., Callegari A., and Ning T. VLSI symp (2004), IEEE, NJ p. 208
12. Houssa M., De Gendt S., Autran J.L., Groeseneken G., and Heyns M.M. Appl Phys Lett 85 (2004) 2101
13. Aoulaiche M., Houssa M., Conard T., Groeseneken G., De Gendt S., and Heyns M.M. Proc intern reliab phys symp (2006), IEEE, NJ p. 317
14. Kushida-Abdelghafar K., Watanabe K., Ushio J., and Murakami E. Appl Phys Lett 81 (2002) 4362
15. Huard V., and Denais M. Proc intern reliab phys symp (2004), IEEE, NJ p. 40
16. Kaczer B., Arkhipov V., Degraeve R., Collaert N., Groeseneken G., and Goodwin M. Proc intern reliab phys symp (2005), IEEE, NJ p. 381
17. Houssa M., Aoulaiche M., Van Elshocht S., De Gendt S., Groeseneken G., and Heyns M.M. IEDM tech dig (2004), IEEE, NJ p. 121
18. Aoulaiche M., Houssa M., Degraeve R., Groeseneken G., De Gendt S., and Heyns M.M. Microelectron Eng 80 (2005) 134
19. Groeseneken G., Maes H.E., Beltran N., and De Keersmaecker R.F. IEEE Trans Electron Dev 31 (1984) 42
20. DiMaria D.J., and Stathis J.H. J Appl Phys 89 (2001) 5015
21. Ogawa S., and Shiono N. Phys Rev B 51 (1995) 4218
22. Helms C.R., and Poindexter E.H. Rep Prog Phys 57 (1994) 791
23. Jeppson K.O., and Svensson C.M. J Appl Phys 48 (1977) 2004
24. Alam M.A. IEDM tech dig (2003), IEEE, NJ p. 345
25. Chakravarthi S., Krishnan A.T., Reddy V., Machala C.F., and Krishnan S. Proc intern reliab phys symp (2004), IEEE, NJ p. 273
26. Krishnan A.T., Reddy V., Chakravarthi S., Rodriguez J., John S., and Krishnan S. IEDM tech dig (2003), IEEE, NJ p. 349
27. McLean F.B. IEEE Trans Nucl Sci 27 (1980) 1651
28. Brown D.B., and Saks N.S. J Appl Phys 70 (1991) 3734
29. Yokozawa A., and Miyamoto Y. Phys Rev B 55 (1997) 13783
30. Blöchl P.E., and Stathis J.H. Phys Rev Lett 83 (1999) 372
31. Rashkeev S.N., Fleetwood D.M., Schrimpf R.D., and Pantelides S.T. Phys Rev Lett 87 (2001) 165506
32. Van de Walle C.G., and Neugebauer J. Nature 423 (2003) 626
33. Houssa M., Aoulaiche M., De Gendt S., Stesmans A., Groeseneken G., and Heyns M.M. Appl Phys Lett 86 (2005) 93506
34. Edwards A.H. Phys Rev B 44 (1991) 1832
35. Zhou X.J., Tsetseris L., Rashkeev S.N., Fleetwood D.M., Schrimpf R.D., Pantelides S.T., et al. Appl Phys Lett 84 (2004) 4394
36. Houssa M., Autran J.L., Stesmans A., and Heyns M.M. Appl Phys Lett 81 (2002) 709
37. Kurtz H.A., and Karna S.P. IEEE Trans Nucl Sci 46 (1999) 1574
38. Stesmans A., and Afanas'ev V.V. Phys Rev B 57 (1998) 10030
39. Yount J.T., Lenahan P.M., and Krick J.T. J Appl Phys 76 (1994) 1754
40. Warren W.L., et al. Phys Rev Lett 65 (1990) 207
41. McPherson J.W., et al. J Appl Phys 88 (2000) 5351
42. Hess K., et al. IEDM tech dig (2000), IEEE, NJ p. 93
43. Houssa M., Autran J.L., Heyns M.M., and Stesmans A. Appl Surf Sci 212-213 (2003) 749
44. Ershov M., et al. Appl Phys Lett 83 (2003) 1647
45. Denais M., Bravaix A., Huard V., Parthasarathy C., Ribes G., Perrier F., et al. IEDM tech dig (2004), IEEE, NJ p. 109