Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Park, Tae Joo ^a   Kim, Jeong Hwan ^a   Jang, Jae Hyuck ^a   Na, Kwang Duk ^a   Hwang, Cheol Seong ^a   Yoo, Jeong Ho ^b  

^a Seoul National University   (South Korea)

^b Jusung Engineering Company Limited   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; HAFNIUM; NITROGEN; NONMETALS; SILICATES; SILICON;

ATOMIC LAYER DEPOSITED; CRYSTALLINITY; HF-SILICATE FILMS; NITROGEN INCORPORATION; PHASE DISTRIBUTIONS; SI CONCENTRATIONS;

HAFNIUM COMPOUNDS;

EID: 51849146972     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2973674     Document Type: Article

References (22)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 0021-8979 10.1063/1.371888 87, 484 (2000).
2. D. A. Neumayer and E. Cartier, J. Appl. Phys. 0021-8979 10.1063/1.1382851 90, 1801 (2001).
3. M. A. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, M. J. Bevan, and L. Colombo, Appl. Phys. Lett. 0003-6951 10.1063/1.1498872 81, 1074 (2002).
4. J. Robertson, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.591472 18, 1785 (2000).
5. M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombp, Appl. Phys. Lett. 0003-6951 10.1063/1.1476397 80, 3183 (2002).
6. M. A. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallce, M. R. Visokay, J. J. Chambers, and L. Colombp, Appl. Phys. Lett. 0003-6951 10.1063/1.1586483 82, 4669 (2003).
7. P. Punchaipetch, T. Okamoto, H. Nakamura, Y. Uraoka, T. Fuyuki, and S. Horii, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.43.7815 43, 7815 (2004).
8. M. -H. Cho, K. B. Chung, D. -H. Ko, Appl. Phys. Lett. 0003-6951 10.1063/1.2355478 89, 142908 (2006).
9. M. -H. Cho, K. B. Chung, D. -W. Moon, Appl. Phys. Lett. 0003-6951 10.1063/1.2374852 89, 182908 (2006).
10. M. A. Quevedo-Lopez, M. El-Bouanani, R. M. Wallace, and B. E. Gnade, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.1507343 20, 1891 (2002).
11. M. Balasubramanian, L. K. Bera, S. Mathew, N. Balasubramanian, V. Lim, M. S. Joo, and B. J. Cho, Thin Solid Films 0040-6090 10.1016/j.tsf.2004.05.121 462, 101 (2004).
12. S. Stemmer, Y. Li, B. Foran, P. S. Lysaght, S. K. Streiffer, P. Fuoss, and S. Seifert, Appl. Phys. Lett. 0003-6951 10.1063/1.1617369 83, 3141 (2003).
13. D. A. Muller and G. D. Wilk, Appl. Phys. Lett. 0003-6951 10.1063/1.1426268 79, 4195 (2001).
14. S. Stemmer, Z. Chen, C. G. Levi, P. S. Lysaght, B. Foran, J. A. Gisby, and J. R. Taylor, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.42.3593 42, 3593 (2003).
15. M. -H. Cho, K. B. Chung, C. N. Whang, D. -H. Ko, J. H. Lee, and N. I. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2202390 88, 202902 (2006).
16. Y. -C. Yeo, T. -J. King, and C. Hu, Appl. Phys. Lett. 81, 11 (2002). 0003-6951
17. T. J. Park, J. H. Kim, M. H. Seo, J. H. Jang, and C. S. Hwang, Appl. Phys. Lett. 0003-6951 10.1063/1.2721845 90, 152906 (2007).
18. K. B. Chung, C. N. Whang, M. -H. Cho, C. J. Yim, and D. -H. Ko, Appl. Phys. Lett. 0003-6951 10.1063/1.2175493 88, 081903 (2006).
19. M. S. Akbar, N. Moumen, J. Barnett, J. Sim, and J. C. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.1854194 86, 032906 (2005).
20. C. S. Kang, H. -J. Cho, K. Onishi, R. Choi, Y. H. Kim, R. Nieh, J. Han, S. Krishnan, A. Shahriar, and J. C. Lee, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2002, 865.
21. S. Kamiyama, T. Miura, and Y. Nara, J. Electrochem. Soc. 0013-4651 10.1149/1.2073125 152, G903 (2005).
22. M. S. Akbar, H. -J. Cho, R. Choi, C. S. Kang, C. Y. Kang, C. H. Choi, S. J. Rhee, Y. H. Kim, and J. C. Lee, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2004.830270 25, 465 (2004).