Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics

Applied Physics Letters

Volumn 91, Issue 9, 2007, Pages

  Maeng, W J ^a   Kim, H ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; GATE DIELECTRICS; INTERFACES (MATERIALS); NITROGEN; THIN FILMS;

DEPTH PROFILE CONTROL; DEVICE DEGRADATION; NITROGEN INCORPORATION; OXIDE THICKNESS;

DEPTH PROFILING;

EID: 34548430525     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2776350     Document Type: Article

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