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Volumn 157, Issue 3, 2010, Pages

Bias temperature instability characteristics of n- and p-type field effect transistors using HfO2 gate dielectrics and metal gate

(10) Jung, Hyung Suk a,b Kim, Jeong Hwan a Lee, Joohwi a Lee, Sang Young a Kim, Un Ki a Hwang, Cheol Seong a Park, Jung Min b Kim, Weon Hong b Song, Min Woo b Lee, Nae In b

a Seoul National University (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CONDITIONS; BIAS TEMPERATURE INSTABILITY; BULK OXIDE TRAPS; DEGRADATION MECHANISM; INTERFACE STATE; INTERFACE TRAP CHARGE; METAL GATE; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NEGATIVE BIAS TEMPERATURE INSTABILITY; NMOSFET; OXIDE TRAP CHARGE; P-TYPE; PMOSFET; POSITIVE BIAS TEMPERATURE INSTABILITIES; TRAPPING/DETRAPPING; ELECTRON TRAPPING;

ACTIVATION ENERGY; DEGRADATION; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRON MULTIPLIERS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METAL RECOVERY; METALS; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; THERMODYNAMIC STABILITY; INTEGRATED CIRCUITS; INTERFACE STATES; METALLIC COMPOUNDS; MOS DEVICES; THRESHOLD VOLTAGE; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 76349108844 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3276457 Document Type: Article

Times cited : (8)

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