Patterning of Cu films by a two-step plasma etching process at low temperature

Journal of the Electrochemical Society

Volumn 157, Issue 4, 2010, Pages

  Wu, Fangyu ^a   Levitin, Galit ^a   Hess, Dennis W ^a  

^a Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CU FILMS; ELECTRICAL RESISTIVITY; ETCH MECHANISM; ETCH PROCESS; ETCH RATES; ETCHING PROCESS; EXPERIMENTAL PARAMETERS; GAS FLOWRATE; H SYSTEMS; INDUCTIVELY-COUPLED; INTEGRATED CIRCUIT DEVICES; LOW TEMPERATURES; LOW-TEMPERATURE PROCESS; PATTERN FIDELITY; PATTERN QUALITY; PLASMA ETCH PROCESS; PLASMA ETCHING PROCESS; PLASMA TREATMENT; REACTIVE PLASMAS; SIZE EFFECTS; SUBSTRATE ELECTRODES; THERMOCHEMICAL ANALYSIS; VOLATILE ETCH PRODUCTS;

ARGON; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; INDUCTIVELY COUPLED PLASMA; METALLIC FILMS; PLASMA APPLICATIONS; PLASMA ETCHING; SILICON COMPOUNDS;

COPPER;

EID: 77949696683     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3314292     Document Type: Article

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