High throughput, high quality dry etching of copper/barrier film stacks

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 417-423

  Markert, M ^a   Bertz, A ^a   Gessner, T ^a   Ye, Y ^b   Zhao, A ^b   Ma, D ^b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DRY ETCHING; ELECTRIC LINES; ELECTROMIGRATION; INTERCONNECTION NETWORKS; METALLIZING; REACTIVE ION ETCHING;

COPPER/BARRIER FILM STACKS;

METALLIC FILMS;

EID: 0033639753     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00310-X     Document Type: Article

References (8)

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3. 2-based discharge. Appl. Surf. Sci. 91:1995;147-151.
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