A new, room-temperature, high-rate plasma-based copper etch process

Vacuum

Volumn 74, Issue 3-4 SPEC. ISS., 2004, Pages 473-477

  Kuo, Yue ^a,b   Lee, Sangheon ^a  

^a TEXAS A AND M UNIVERSITY   (United States)

^b Department of Electrical and Computer Engineering   (United States)

Author keywords

Copper; Plasma etch; Plasma etch of copper; Reactive ion etch

Indexed keywords

COPPER; ELECTROCHEMICAL ELECTRODES; HIGH TEMPERATURE EFFECTS; LASER BEAMS; MICROELECTRONICS; PHOTORESISTS; PLASMA ETCHING; ULTRAVIOLET RADIATION;

ELECTRODE DESIGN; ETCHANTS; PLASMA ETCH OF COPPER; SELF BIAS VOLTAGE;

REACTIVE ION ETCHING;

EID: 2442551539     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.01.072     Document Type: Article

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