-
1
-
-
84886448151
-
Full copper wiring in a sub-0.25μm CMOS ULSI technology
-
D. Edelstein, J. Heidenreich, R. Goldblatt, W. Cote, C. Uzoh, N. Lustig, P. Roper, T. McDevitt, W. Motsiff, A. Simon, J. Dukovic, R. Wachnik, H. Rathore, R. Schulz, L. Su, S. Luce, J. Slattery, "Full copper wiring in a sub-0.25μm CMOS ULSI technology", IEDM Proc., 1997, pp. 773-776.
-
(1997)
IEDM Proc
, pp. 773-776
-
-
Edelstein, D.1
Heidenreich, J.2
Goldblatt, R.3
Cote, W.4
Uzoh, C.5
Lustig, N.6
Roper, P.7
McDevitt, T.8
Motsiff, W.9
Simon, A.10
Dukovic, J.11
Wachnik, R.12
Rathore, H.13
Schulz, R.14
Su, L.15
Luce, S.16
Slattery, J.17
-
2
-
-
34748815818
-
A highly reliable Cu interconnect technology for memory devices
-
H.B. Lee, J.W. Hong, G.J. Seong, J.M. Lee, H. Park, J.M. Baek, K.I. Choi, B.L. Park, J.Y. Bae, G.H. Choi, S.T. Kim, U.I. Chung, J.T. Moon, J.H. Oh, J.H. Son, J.H. Jung, S. Hah, S.Y. Lee, "A highly reliable Cu interconnect technology for memory devices", IITC Proc., 2007, pp. 64-66.
-
(2007)
IITC Proc
, pp. 64-66
-
-
Lee, H.B.1
Hong, J.W.2
Seong, G.J.3
Lee, J.M.4
Park, H.5
Baek, J.M.6
Choi, K.I.7
Park, B.L.8
Bae, J.Y.9
Choi, G.H.10
Kim, S.T.11
Chung, U.I.12
Moon, J.T.13
Oh, J.H.14
Son, J.H.15
Jung, J.H.16
Hah, S.17
Lee, S.Y.18
-
3
-
-
23844526859
-
Advanced analog metal and passives integration
-
A.K. Stamper, A.K. Chinthakindi, D.D. Coolbaugh, K. Downes, E.E. Eshun, M. Ertuk, R.A. Groves, P. Lindgren, Z.-X. He, V. Ramachandran, "Advanced analog metal and passives integration", Proc. AMC 2004, MRS, 2005, pp. 37-43.
-
(2005)
Proc. AMC 2004
, vol.MRS
, pp. 37-43
-
-
Stamper, A.K.1
Chinthakindi, A.K.2
Coolbaugh, D.D.3
Downes, K.4
Eshun, E.E.5
Ertuk, M.6
Groves, R.A.7
Lindgren, P.8
He, Z.-X.9
Ramachandran, V.10
-
4
-
-
33644950278
-
Optimization of Cu interconnect layers for CMOS image sensor technology
-
J. Gambino, J. Adkisson, T. Hoague, M. Jaffe, R. Leidy, R.J. Rassel, J. Kyan, D. McGrath, D. Sackett, "Optimization of Cu interconnect layers for CMOS image sensor technology", Proc. AMC 2005, MRS, 2006, pp. 151-157.
-
(2006)
Proc. AMC 2005
, vol.MRS
, pp. 151-157
-
-
Gambino, J.1
Adkisson, J.2
Hoague, T.3
Jaffe, M.4
Leidy, R.5
Rassel, R.J.6
Kyan, J.7
McGrath, D.8
Sackett, D.9
-
5
-
-
0003745180
-
-
Prentice-Hall, Upper Saddle, River, NJ
-
M. Quirk, J. Serda, in Semiconductor Manufacturing Technology, Prentice-Hall, Upper Saddle, River, NJ, 2001.
-
(2001)
Semiconductor Manufacturing Technology
-
-
Quirk, M.1
Serda, J.2
-
6
-
-
33947279453
-
Changing density requirements for semiconductor manufacturing
-
H.S. Landis, J.-T. Sucharitaves, "Changing density requirements for semiconductor manufacturing", AMC Proc. 2007, MRS 2008, pp. 535-542.
-
(2007)
AMC Proc
, vol.MRS 2008
, pp. 535-542
-
-
Landis, H.S.1
Sucharitaves, J.-T.2
-
7
-
-
19944432253
-
Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller
-
W. Steinhogl, G. Schindler, G. Steinlesberger, M. Traving, M. Engelhardt, "Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller", J. Appl. Phys., vol. 97, pp. 0237061 - 0237067, 2005.
-
(2005)
J. Appl. Phys
, vol.97
, pp. 0237061-0237067
-
-
Steinhogl, W.1
Schindler, G.2
Steinlesberger, G.3
Traving, M.4
Engelhardt, M.5
-
8
-
-
4544282492
-
Influence of the electron mean free path on the resistivity of thin metal films
-
W. Shang, S.H. Brongersma, O. Richard, B. Brijs, R. Palmans, L. Froyen, K. Maex, "Influence of the electron mean free path on the resistivity of thin metal films", Microelec. Eng., vol. 76, pp. 146-152, 2004.
-
(2004)
Microelec. Eng
, vol.76
, pp. 146-152
-
-
Shang, W.1
Brongersma, S.H.2
Richard, O.3
Brijs, B.4
Palmans, R.5
Froyen, L.6
Maex, K.7
-
9
-
-
28244437189
-
Impact of size effects on the resistivity of copper wires and consequently the design and performance of metal interconnect networks
-
R. Sarvari, A. Naeemi, R. Venkatesan, J.D. Meindl, "Impact of size effects on the resistivity of copper wires and consequently the design and performance of metal interconnect networks", IITC Proc., 2005, pp. 197-199.
-
(2005)
IITC Proc
, pp. 197-199
-
-
Sarvari, R.1
Naeemi, A.2
Venkatesan, R.3
Meindl, J.D.4
-
10
-
-
84927923035
-
Integration of copper with low-k dielectrics for 0.13 μm technology
-
J. Gambino, A. Stamper, T. McDevitt, V. McGahay, S. Luce, T. Pricer, B. Porth, C. Senowitz, R. Kontra, M. Gibson, H. Wildman, A. Piper, C. Benson, T. Standaert, P. Biolsi, E. Cooney, E. Webster, R. Wistrom, A. Winslow, E. White., "Integration of copper with low-k dielectrics for 0.13 μm technology", Proc. IPFA, 2002, pp. 111-117.
-
(2002)
Proc. IPFA
, pp. 111-117
-
-
Gambino, J.1
Stamper, A.2
McDevitt, T.3
McGahay, V.4
Luce, S.5
Pricer, T.6
Porth, B.7
Senowitz, C.8
Kontra, R.9
Gibson, M.10
Wildman, H.11
Piper, A.12
Benson, C.13
Standaert, T.14
Biolsi, P.15
Cooney, E.16
Webster, E.17
Wistrom, R.18
Winslow, A.19
White, E.20
more..
-
11
-
-
0029540947
-
CVD of fluorosilicate glass for ULSI applications
-
M.J. Shapiro, S.V. Nguyen, T. Matsuda, D. Dobuzinsky, "CVD of fluorosilicate glass for ULSI applications", Thin Solid Films, vol. 270, pp. 503-507, 1995.
-
(1995)
Thin Solid Films
, vol.270
, pp. 503-507
-
-
Shapiro, M.J.1
Nguyen, S.V.2
Matsuda, T.3
Dobuzinsky, D.4
-
12
-
-
84887226882
-
Low and ultralow dielectric constant films prepared by plasma-enhanced chemical vapor deposition
-
ed. M. Baklanov, M. Green, K. Maex, John Wiley & Sons
-
A. Grill, "Low and ultralow dielectric constant films prepared by plasma-enhanced chemical vapor deposition", in Dielectrics for Advanced Microelectronics, ed. M. Baklanov, M. Green, K. Maex, John Wiley & Sons, 2007, pp. 1-32.
-
(2007)
Dielectrics for Advanced Microelectronics
, pp. 1-32
-
-
Grill, A.1
-
13
-
-
8644274781
-
Chip-to-package interaction for a 90 nm Cu / PECVD low-k technology
-
W. Landers, D. Edelstein, L. Clevenger, S. Das, C.-C. Yang, T. Aoki, F. Beaulieu, J. Casey, A. Cowley, M. Cullinan, T. Daubenspeck, C. Davis, J. Demarest, E. Duchesne, L. Guerin, D. Hawkin, T. Ivers, M. Lane, X. Liu, T. Lombardi, C. McCarthy, C. Muzzy, J. Nadeau-Filteau, D. Questad, W. Sauter, T. Shaw, J. Wright, "Chip-to-package interaction for a 90 nm Cu / PECVD low-k technology", IITC Proc., 2004, pp. 108-110.
-
(2004)
IITC Proc
, pp. 108-110
-
-
Landers, W.1
Edelstein, D.2
Clevenger, L.3
Das, S.4
Yang, C.-C.5
Aoki, T.6
Beaulieu, F.7
Casey, J.8
Cowley, A.9
Cullinan, M.10
Daubenspeck, T.11
Davis, C.12
Demarest, J.13
Duchesne, E.14
Guerin, L.15
Hawkin, D.16
Ivers, T.17
Lane, M.18
Liu, X.19
Lombardi, T.20
McCarthy, C.21
Muzzy, C.22
Nadeau-Filteau, J.23
Questad, D.24
Sauter, W.25
Shaw, T.26
Wright, J.27
more..
-
14
-
-
0031705243
-
Elimination of bond-pad damage through structural reinforcement of intermetal dielectrics
-
M. Saran, R. Cox, C. Martin, G. Ryan, T. Kudoh, M. Kanasugi, J. Hortaleza, M. Ibnabdeljalil, M. Murtuza, D. Capistrano, R. Roderos, R. Macaraeg, "Elimination of bond-pad damage through structural reinforcement of intermetal dielectrics", IRPS Proc.,1998, pp. 225-231.
-
(1998)
IRPS Proc
, pp. 225-231
-
-
Saran, M.1
Cox, R.2
Martin, C.3
Ryan, G.4
Kudoh, T.5
Kanasugi, M.6
Hortaleza, J.7
Ibnabdeljalil, M.8
Murtuza, M.9
Capistrano, D.10
Roderos, R.11
Macaraeg, R.12
-
15
-
-
10444263716
-
Underfill characteristics for low-k dielectric / Cu interconnect IC flip-chip package reliability
-
P.-H. Tsao, C. Huang, M.-J. Lii, B. Su, N.-S. Tsai, "Underfill characteristics for low-k dielectric / Cu interconnect IC flip-chip package reliability", Proc. ECTC, 2004, p. 767-769.
-
(2004)
Proc. ECTC
, pp. 767-769
-
-
Tsao, P.-H.1
Huang, C.2
Lii, M.-J.3
Su, B.4
Tsai, N.-S.5
-
16
-
-
28244485434
-
Comprehensive process design for low-cost chip packaging with circuit-under-pad (CUP) structure in porous-SiCOH film
-
M. Tagami, H. Ohtake, M. Abe, F. Ito, T. Takeuchi, K. Ohto, T. Usami, M. Suzuki, T. Suzuki, N. Sashida, Y. Hayashi, "Comprehensive process design for low-cost chip packaging with circuit-under-pad (CUP) structure in porous-SiCOH film", IITC Proc., 2005, p. 12-14.
-
(2005)
IITC Proc
, pp. 12-14
-
-
Tagami, M.1
Ohtake, H.2
Abe, M.3
Ito, F.4
Takeuchi, T.5
Ohto, K.6
Usami, T.7
Suzuki, M.8
Suzuki, T.9
Sashida, N.10
Hayashi, Y.11
-
17
-
-
23844439577
-
Moisture and oxygen uptake in low-k / copper interconnect structures
-
T.M. Shaw, D. Jimerson, D. Haders, C.E. Murray, A. Grill, D.C. Edelstein, D. Chidambarrao, "Moisture and oxygen uptake in low-k / copper interconnect structures", AMC Proc. 2003, MRS 2004, pp. 77-84.
-
(2003)
AMC Proc
, vol.MRS 2004
, pp. 77-84
-
-
Shaw, T.M.1
Jimerson, D.2
Haders, D.3
Murray, C.E.4
Grill, A.5
Edelstein, D.C.6
Chidambarrao, D.7
-
18
-
-
55349084019
-
Pore-connectivity dependence of moisture absorption into porous low-k films by positron-annihilation lifetime spectroscopy
-
F. Ito, T. Takeuchi, H. Yamamoto, T. Ohdaira, R. Suzuki, Y. Hayashi, "Pore-connectivity dependence of moisture absorption into porous low-k films by positron-annihilation lifetime spectroscopy", AMC Proc. 2007, MRS 2008, pp. 465-470.
-
(2007)
AMC Proc
, vol.MRS 2008
, pp. 465-470
-
-
Ito, F.1
Takeuchi, T.2
Yamamoto, H.3
Ohdaira, T.4
Suzuki, R.5
Hayashi, Y.6
-
19
-
-
0034452563
-
Effect of via separation and low-k dielectric materials on the thermal characteristics of Cu interconnects
-
T.-Y. Chiang, K. Banerjee, K.C. Saraswat, "Effect of via separation and low-k dielectric materials on the thermal characteristics of Cu interconnects", IEDM Proc., 2000, pp. 261-264.
-
(2000)
IEDM Proc
, pp. 261-264
-
-
Chiang, T.-Y.1
Banerjee, K.2
Saraswat, K.C.3
-
20
-
-
55349090279
-
-
S. Nitta, S.Ponoth, G. Breyta, M. Colburn, L. Clevenger, D. Horak, M. Bhushan, J. E. S. Cohen, J.Colt, P. Flaitz, E. Fluhr, N. Fuller, A. E. Huang, C.K.Hu, K. Kumar, H.Landis, B. Li, W.-K. Li, E. Liniger, A. Lisi, X. Liu, J.R. Lloyd, I. Melville, J. Muncy, T. Nogami, V. Ramachandran, D.L. Rath, T. Standaert, J.-T.Sucharitaves, D. Tumbull, E. Crabbe, B. McCredie, M. Lane, S. Purushothaman, D. Edelstein, A multilevel copper / low-k / airgap BEOL technology, AMC Proc. 2007, MRS 2008, pp. 329-336.
-
S. Nitta, S.Ponoth, G. Breyta, M. Colburn, L. Clevenger, D. Horak, M. Bhushan, J. E. S. Cohen, J.Colt, P. Flaitz, E. Fluhr, N. Fuller, A. E. Huang, C.K.Hu, K. Kumar, H.Landis, B. Li, W.-K. Li, E. Liniger, A. Lisi, X. Liu, J.R. Lloyd, I. Melville, J. Muncy, T. Nogami, V. Ramachandran, D.L. Rath, T. Standaert, J.-T.Sucharitaves, D. Tumbull, E. Crabbe, B. McCredie, M. Lane, S. Purushothaman, D. Edelstein, "A multilevel copper / low-k / airgap BEOL technology", AMC Proc. 2007, MRS 2008, pp. 329-336.
-
-
-
-
22
-
-
36749115512
-
Stress generation by electromigration
-
I.A. Blech, C. Herring, "Stress generation by electromigration" , Appl. Phys. Lett., vol. 29, pp. 131-133, 1976.
-
(1976)
Appl. Phys. Lett
, vol.29
, pp. 131-133
-
-
Blech, I.A.1
Herring, C.2
-
23
-
-
50949098804
-
Blech effect and lifetime projection for Cu / low-k interconnects
-
C. Christiansen, B. Li, J. Gill, "Blech effect and lifetime projection for Cu / low-k interconnects", IITC Proc., 2008, p. 114-116.
-
(2008)
IITC Proc
, pp. 114-116
-
-
Christiansen, C.1
Li, B.2
Gill, J.3
-
24
-
-
74049116367
-
-
ITRS Roadmap
-
ITRS Roadmap 2007; http://www.itrs.net/
-
(2007)
-
-
-
25
-
-
30844463697
-
Electromigration of Cu/low dielectric constant interconnects
-
C.-K. Hu, L. Gignac, R. Rosenberg, "Electromigration of Cu/low dielectric constant interconnects", Microelec. Rel., vol 46, pp. 213-231, 2006.
-
(2006)
Microelec. Rel
, vol.46
, pp. 213-231
-
-
Hu, C.-K.1
Gignac, L.2
Rosenberg, R.3
-
26
-
-
0037323106
-
Relationship between interfacial adhesion and electromigration in Cu metallization
-
M.W. Lane, E.G. Liniger, J.R. Lloyd, "Relationship between interfacial adhesion and electromigration in Cu metallization", J. Appl. Phys., vol 93, pp. 1417-1421, 2003.
-
(2003)
J. Appl. Phys
, vol.93
, pp. 1417-1421
-
-
Lane, M.W.1
Liniger, E.G.2
Lloyd, J.R.3
-
27
-
-
33846301057
-
Effects of Al doping on the electromigration performance of damascene Cu interconnects
-
S. Yokogawa, H. Tsuchiya, "Effects of Al doping on the electromigration performance of damascene Cu interconnects", J. Appl. Phys., vol. 101, p. 013513, 2007.
-
(2007)
J. Appl. Phys
, vol.101
, pp. 013513
-
-
Yokogawa, S.1
Tsuchiya, H.2
-
28
-
-
50249146387
-
Cu alloy metallization for self-forming barrier process
-
J. Koike, M. Haneda, J. Iijima, M. Wada, "Cu alloy metallization for self-forming barrier process", IITC Proc., 2006, pp. 161-163.
-
(2006)
IITC Proc
, pp. 161-163
-
-
Koike, J.1
Haneda, M.2
Iijima, J.3
Wada, M.4
-
29
-
-
84955240546
-
Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics
-
E.T. Ogawa, J. Kim, G.S. Haase, H.C. Mogul, J.W. McPherson, "Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics", IRPS Proc., 2003, pp. 166-172.
-
(2003)
IRPS Proc
, pp. 166-172
-
-
Ogawa, E.T.1
Kim, J.2
Haase, G.S.3
Mogul, H.C.4
McPherson, J.W.5
-
30
-
-
34250652290
-
A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development
-
F. Chen, O. Bravo, K. Chanda, P. McLaughlin, T. Sullivan, J. Gill, J. Lloyd, R. Kontra, J. Aitken, "A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development", IRPS Proc., 2006, pp. 46-53.
-
(2006)
IRPS Proc
, pp. 46-53
-
-
Chen, F.1
Bravo, O.2
Chanda, K.3
McLaughlin, P.4
Sullivan, T.5
Gill, J.6
Lloyd, J.7
Kontra, R.8
Aitken, J.9
-
31
-
-
28744438409
-
-
F. Chen, K. Chanda, J. Gill, M. Angyal, J.Demarest, T. Sullivan, R. Kontra, M. Shinosky, J. Li, L. Economikos, M. Hoinkis, S. Lane, D. McHerron, M. Inohara, S. Boettcher, D. Dunn, M. Fukasawa, B.C. Zhang, K. Ida, T. Ema, G. Lembach, K. Kumar, Y. Lin, H. Maynard, K. Urata, T. Bolom, K. Inoue, J. Smith, Y. Ishikawa, M. Naujok, P. Ong, A. Sakamoto, D. Hunt, J. Aitken, Investigation of CVD SiCOH low-k time-dependent dielectric breakdown at 65nm node technology, IRPS Proc., 2005, p. 501-507.
-
F. Chen, K. Chanda, J. Gill, M. Angyal, J.Demarest, T. Sullivan, R. Kontra, M. Shinosky, J. Li, L. Economikos, M. Hoinkis, S. Lane, D. McHerron, M. Inohara, S. Boettcher, D. Dunn, M. Fukasawa, B.C. Zhang, K. Ida, T. Ema, G. Lembach, K. Kumar, Y. Lin, H. Maynard, K. Urata, T. Bolom, K. Inoue, J. Smith, Y. Ishikawa, M. Naujok, P. Ong, A. Sakamoto, D. Hunt, J. Aitken, "Investigation of CVD SiCOH low-k time-dependent dielectric breakdown at 65nm node technology", IRPS Proc., 2005, p. 501-507.
-
-
-
-
32
-
-
0034256164
-
Interfacial morphology and shear deformation of flip chip solder joints
-
p0
-
J.W. Jang, C.Y. Liu, P.G. Kim, K.N. Tu, A.K. Mal, D.R. Frear, "Interfacial morphology and shear deformation of flip chip solder joints", J. Mater. Res., vol. 15, p0. 1679-1687, 2000.
-
(2000)
J. Mater. Res
, vol.15
, pp. 1679-1687
-
-
Jang, J.W.1
Liu, C.Y.2
Kim, P.G.3
Tu, K.N.4
Mal, A.K.5
Frear, D.R.6
-
33
-
-
74049083035
-
-
to be published, Electrochem. Soc. Proc
-
R.A. Susko, T.H. Daubenspeck, T.A. Wassick, T.D. Sullivan, W. Sauter, J. Cincotta, "Solder bump electromigration and CPI challenges in low-k devices", to be published, Electrochem. Soc. Proc., 2008.
-
(2008)
Solder bump electromigration and CPI challenges in low-k devices
-
-
Susko, R.A.1
Daubenspeck, T.H.2
Wassick, T.A.3
Sullivan, T.D.4
Sauter, W.5
Cincotta, J.6
-
34
-
-
0038662661
-
-
J. Dunn, D.C. Ahlgren, D.D. Coolbaugh, N.B. Feilchenfeld, G. Freeman, D.R.Greenberg, R.A. Groves, F.J. Guarín, Y. Hammad, A.J. Joseph, L.D. Lanzerotti, S.A. St.Onge, B.A. Orner, J.-S. Rieh, K.J. Stein, S.H. Voldman, P.-C. Wang, M.J. Zierak, S. Subbanna, D.L.Harame, D.A. Herman Jr, B.S.Meyerson, Bernard S, Foundation of rf CMOS and SiGe BiCMOS technologies
-
J. Dunn, D.C. Ahlgren, D.D. Coolbaugh, N.B. Feilchenfeld, G. Freeman, D.R.Greenberg, R.A. Groves, F.J. Guarín, Y. Hammad, A.J. Joseph, L.D. Lanzerotti, S.A. St.Onge, B.A. Orner, J.-S. Rieh, K.J. Stein, S.H. Voldman, P.-C. Wang, M.J. Zierak, S. Subbanna, D.L.Harame, D.A. Herman Jr., B.S.Meyerson, Bernard S., "Foundation of rf CMOS and SiGe BiCMOS technologies", IBM J. Res. Dev., vol. 47, pp. 101-137, 2003.
-
(2003)
IBM J. Res. Dev
, vol.47
, pp. 101-137
-
-
-
35
-
-
0345815430
-
Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies
-
P. Zurcher, P. Alluri, P. Chu, A. Duvallet, C. Happ, R. Henderson, J. Mendonca, M. Kim, M. Petras, M. Raymond, T. Remmel, D. Roberts, B. Steimle, J. Stipanuk, S. Straub, T. Sparks, M. Tarabbia, H. Thibieroz, M. Miller, "Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies", IEDM Proc., 2000, p. 153-156.
-
(2000)
IEDM Proc
, pp. 153-156
-
-
Zurcher, P.1
Alluri, P.2
Chu, P.3
Duvallet, A.4
Happ, C.5
Henderson, R.6
Mendonca, J.7
Kim, M.8
Petras, M.9
Raymond, M.10
Remmel, T.11
Roberts, D.12
Steimle, B.13
Stipanuk, J.14
Straub, S.15
Sparks, T.16
Tarabbia, M.17
Thibieroz, H.18
Miller, M.19
-
36
-
-
0141761559
-
Characterization and comparison of high-k metal-insulator-metal (MiM) capacitors in 0.13 μm Cu BEOL for mixed-mode and RF applications
-
Y.L. Tu, H.L. Lin, L.L. Chao, D. Wu, C.S. Tsai, C. Wang, C.F. Huang, C.H. Lin, J. Sun, "Characterization and comparison of high-k metal-insulator-metal (MiM) capacitors in 0.13 μm Cu BEOL for mixed-mode and RF applications", Symp. VLSI Tech. Proc., 2003, pp. 79-80.
-
(2003)
Symp. VLSI Tech. Proc
, pp. 79-80
-
-
Tu, Y.L.1
Lin, H.L.2
Chao, L.L.3
Wu, D.4
Tsai, C.S.5
Wang, C.6
Huang, C.F.7
Lin, C.H.8
Sun, J.9
-
37
-
-
27744564482
-
Integrated high-κ (κ∼19) MIM capacitor with Cu / low-k interconnects for RF applications
-
M.B. Yu, Y.Z. Xiong, S.-J. Kim, S. Balakumar, C. Zhu, M.-F. Li, B.-J. Cho, G.Q. Lo, N. Balasubramanian, D.-L. Kwong, "Integrated high-κ (κ∼19) MIM capacitor with Cu / low-k interconnects for RF applications", IEEE Elec. Dev. Lett., vol. 26, pp. 793-795 (2005).
-
(2005)
IEEE Elec. Dev. Lett
, vol.26
, pp. 793-795
-
-
Yu, M.B.1
Xiong, Y.Z.2
Kim, S.-J.3
Balakumar, S.4
Zhu, C.5
Li, M.-F.6
Cho, B.-J.7
Lo, G.Q.8
Balasubramanian, N.9
Kwong, D.-L.10
-
38
-
-
23944448913
-
Advanced CMOS technology portfolio for RF IC applications
-
C.-S. Chang, C.-P. Chao, J.G.J. Chern, J.Y.-C. Sun, "Advanced CMOS technology portfolio for RF IC applications", IEEE Trans. Elec. Dev., vol. 52, pp. 1324-1334, 2005.
-
(2005)
IEEE Trans. Elec. Dev
, vol.52
, pp. 1324-1334
-
-
Chang, C.-S.1
Chao, C.-P.2
Chern, J.G.J.3
Sun, J.Y.-C.4
-
39
-
-
23944508128
-
MIM capacitor integration for mixed-signal / RF applications
-
C.H. Ng, C.-S. Ho, S.-F. Chu, S.-C. Sun, "MIM capacitor integration for mixed-signal / RF applications", IEEE Trans. Elec. Dev., vol. 52, pp. 1399-1409, 2005.
-
(2005)
IEEE Trans. Elec. Dev
, vol.52
, pp. 1399-1409
-
-
Ng, C.H.1
Ho, C.-S.2
Chu, S.-F.3
Sun, S.-C.4
-
40
-
-
74049133692
-
High Q inductors and capacitors on Si substrates
-
S. Jenei, S. Decoutre, S. Van Huylenbroeck, G. Vanhorebeek, B. Nauelaers, "High Q inductors and capacitors on Si substrates", Proc. Silicon Monolithic Circuits in RF Systems, 2001, pp. 64-70.
-
(2001)
Proc. Silicon Monolithic Circuits in RF Systems
, pp. 64-70
-
-
Jenei, S.1
Decoutre, S.2
Van Huylenbroeck, S.3
Vanhorebeek, G.4
Nauelaers, B.5
-
41
-
-
0036475352
-
-
S.-M. Yim, T. Chen, K.K. O, The effect of a ground shield on the characteristics and performance of spiral inductors, IEEE J. Solid-State Circuits, 37, pp. 237-244, 2002.
-
S.-M. Yim, T. Chen, K.K. O, "The effect of a ground shield on the characteristics and performance of spiral inductors", IEEE J. Solid-State Circuits, vol. 37, pp. 237-244, 2002.
-
-
-
-
42
-
-
74049132903
-
A small area, 3-dimensional on-chip inductors for high-speed signal processing under low power supply voltages
-
K. Hijioka, A. Tanabe, Y. Amamiya, Y. Hayashi, "A small area, 3-dimensional on-chip inductors for high-speed signal processing under low power supply voltages", SSDM Proc., 2007, pp. 910-911.
-
(2007)
SSDM Proc
, pp. 910-911
-
-
Hijioka, K.1
Tanabe, A.2
Amamiya, Y.3
Hayashi, Y.4
-
43
-
-
46049110748
-
Integrated on-chip inductors with magnetic films
-
D.S. Gardner, G. Schrom, P. Hazucha, F. Paillet, T. Karnik, S. Borkar, J. Saulters, J. Owens, J. Wetzel, "Integrated on-chip inductors with magnetic films", IEDM Proc., 2006, p. 221-224.
-
(2006)
IEDM Proc
, pp. 221-224
-
-
Gardner, D.S.1
Schrom, G.2
Hazucha, P.3
Paillet, F.4
Karnik, T.5
Borkar, S.6
Saulters, J.7
Owens, J.8
Wetzel, J.9
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