Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF application

IEEE Electron Device Letters

Volumn 26, Issue 11, 2005, Pages 793-795

  Yu, M B ^a   Xiong, Yong Zhong ^a   Kim, Sun Jung ^b   Balakumar, S ^a   Zhu, Chunxiang ^b   Li, M F ^a,b   Cho, Byung Jin ^b   Lo, G Q ^a   Balasubramanian, N ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Cu low backend; High ; Metal insulator metal (MIM) capacitor; Radio frequency (RF) application; Resonant frequency

Indexed keywords

ALUMINA; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC INSULATORS; HAFNIUM COMPOUNDS; MIM DEVICES; NATURAL FREQUENCIES; PERMITTIVITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE;

ATOMIC LAYER DEPOSITED (ALD); BACKEND-OF-LINE (BEOL); FOCUS-ION-BEAM (FIB); METAL HIGH INSULATOR METAL (MIM) CAPACITOR; RADIO FREQUENCY INTEGRATED CIRCUIT (RFIC); VOLTAGE COEFFICIENT OF CAPACITANCE (VCC);

CAPACITORS;

EID: 27744564482     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.857694     Document Type: Article

References (9)

1. 5/Cu MIM structure for SoC applications featuring a single-mask add-on process," in IEDM Tech. Dig., 2002, pp. 940-942.
2. x dielectrics," IEEE Electron Device Lett., vol. 23, no. 4, pp. 185-187, Apr. 2002.
3. 2 dielectrics," IEEE Electron Device Lett., vol. 24, no. 2, pp. 63-65, Feb. 2003.
4. Y. L. Tu, H. L. Lin, L. L. Chao, D. Wu, C. S. Tsai, C. Wang, C. F. Huang, C. H. Lin, and J. Sun, "Characterization and comparison of high-a metal-insulator-metal (MIM) capacitors in 0.13 μm Cu BEOL for mixed-mode and RF applications," in Symp. VLSI Tech. Dig., 2003, pp. 79-80.
5. x dieletrics," IEEE Electron Device Lett., vol. 24, no. 2, pp. 60-62, Feb. 2003.
6. 3/ laminate MIM capacitors for RF and mixed signal IC applications," in IEDM Tech. Dig., 2003, pp. 379-382.
7. 3 laminate MIM capacitors outperforming sandwich counterparts," IEEE Electron Device Lett., vol. 25, no. 10, pp. 681-683, 2004.
8. 3 plasma interface treatments for mixed-signal/RF applications," in VLSI Symp. Tech. Dig., 2004, pp. 222-223.
9. P. J. V. Wijnen, H. R. Claessen, and E. A. Wolsheimer, "A new straightforward calibration and correction procedure for on-wafer high frequency S-parameter measurements (45 MHz-18 GHz)," in Proc. IEEE BCTM, 1987, pp. 70-73.