Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

Applied Physics Letters

Volumn 89, Issue 15, 2006, Pages

  Shi, B M ^a   Xie, M H ^a   Wu, H S ^a   Wang, N ^b   Tong, S Y ^c  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION RATES; GALLIUM FLUXES; SOURCE FLUXES; WURTZITE;

CRYSTAL STRUCTURE; DEPOSITION; MOLECULAR BEAM EPITAXY; NUCLEATION; REACTION KINETICS; SEMICONDUCTING FILMS;

GALLIUM NITRIDE;

EID: 33749994984     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2360916     Document Type: Article

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