GaN grown in polar and non-polar directions

Opto-Electronics Review

Volumn 12, Issue 4, 2004, Pages 339-346

  Liliental Weber, Z ^a   Jasinski, J ^a   Zakharov, D N ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Dislocations; GaN films; HVPE; MBE growth; Polar and non polar growth

Indexed keywords

CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS;

GAN FILMS; HYDRIDE VAPOR PHASE EPITAXY (HVPE); MBE GROWTH; PLANAR DEFECTS;

GALLIUM NITRIDE;

EID: 11844272004     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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