Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4979-4982

  Miyagawa, R ^a   Narukawa, M ^a   Ma, B ^a   Miyake, H ^a   Hiramatsu, K ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

A3. MOVPE; B1. a plane GaN; B1. Nitrides

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; GALLIUM NITRIDE; GROWTH TEMPERATURE; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM; SURFACE MORPHOLOGY; VAPOR PHASE EPITAXY;

A PLANES; A3. MOVPE; B1. A-PLANE GAN; B1. NITRIDES; CRYSTALLINE QUALITIES; METAL ORGANIC; PLANE SAPPHIRES; PRESSURE CONDITIONS; PRESSURE DEPENDENCES; REACTOR PRESSURES; SMOOTH SURFACES;

GALLIUM ALLOYS;

EID: 56249106473     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.027     Document Type: Article

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