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Volumn 47, Issue 10 PART 1, 2008, Pages 7854-7856

Increased polarization ratio on semipolar (112̄2) InGaN/GaN light-emitting diodes with increasing indium composition

Author keywords

(112 2) plane; Bulk GaN; Light emitting diode; Polarization; Semipolar

Indexed keywords

CURRENT DENSITY; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; OPTICAL PROPERTIES; POLARIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; WIND;

EID: 62249083893     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7854     Document Type: Article
Times cited : (31)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.