Understanding and controlling pore etching in semiconductors

ECS Transactions

Volumn 6, Issue 2, 2007, Pages 309-322

  Foll H ^a   Carstensen, J ^a   Foca, E ^a   Leisner, M ^a  

^a UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FAST FOURIER TRANSFORMS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; INTERFACE STATES; SEMICONDUCTING INDIUM PHOSPHIDE; STOCHASTIC CONTROL SYSTEMS; STOCHASTIC MODELS; STOCHASTIC SYSTEMS;

CURRENT OSCILLATION; ETCHING PARAMETERS; IMPEDANCE SPECTROSCOPY; IN-SITU MEASUREMENT; MONTE CARLO ALGORITHMS; ORGANIC ELECTROLYTE; P TYPE SEMICONDUCTOR; SELF ORGANIZATIONS;

ANODIC OXIDATION;

EID: 45749112969     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2731199     Document Type: Conference Paper

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