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Applied Physics A: Materials Science and Processing

Volumn 80, Issue 7, 2005, Pages 1391-1396

Pushing the limits of macroporous silicon etching

(4) Matthias, S a Muller F a Schilling, J a,b Gosele U a

a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

b CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; CURRENT DENSITY; ELECTROCHEMISTRY; ELECTROLYTIC POLISHING; LATTICE CONSTANTS; MASS TRANSFER; MICROSTRUCTURE; PERMITTIVITY; PHOTONS; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

MACROPOROUS SILICON ETCHING; PHOTOELECTROCHEMICAL ETCHING; SILICON DISSOLUTION; SPACE-CHARGE REGION (SCR);

ETCHING;

EID: 18544380086 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-3193-x Document Type: Article

Times cited : (70)

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