|
|
Volumn 146, Issue 3, 1999, Pages 1134-1140
|
|
Model for current-voltage oscillations at the silicon electrode and comparison with experimental results
a
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CAPACITANCE;
COMPUTER SIMULATION;
CURRENT DENSITY;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC POTENTIAL;
ETCHING;
MATHEMATICAL MODELS;
MONTE CARLO METHODS;
OXIDATION;
SILICON;
SURFACE ROUGHNESS;
THERMAL EFFECTS;
CURRENT-VOLTAGE OSCILLATIONS;
ELECTROCHEMICAL ELECTRODES;
|
|
EID: 0033096770
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1391734 Document Type: Article |
|
Times cited : (87)
|
|
References (24)
|
