New high-voltage unipolar mode p+ Si/n- 4H-SiC heterojunction diode

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 953-956

  Hayashi, Tetsuya ^a   Tanaka, Hideaki ^a   Shimoida, Yoshio ^a   Tanimoto, Satoshi ^a   Hoshi, Masakatsu ^a  

^a Nissan Motro Co Ltd   (Japan)

Author keywords

4H SiC; Heterojunction diode; High voltage; Unipolar action

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL LAYERS; HETEROJUNCTIONS; LEAKAGE CURRENTS; SILICON CARBIDE;

4H-SIC; HETEROJUNCTION DIODE; UNIPOLAR ACTION; ZERO REVERSE RECOVERY;

SCHOTTKY BARRIER DIODES;

EID: 27744578057     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.953     Document Type: Conference Paper

References (2)

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2. M.K. Ieong, P.M. Solomon, S.E. Laux, H.S.P. Wong, and D. Chidambarrao: IEDM (1998), pp. 733-736.