Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1175-1178

  Ota, C ^a   Nishio, J ^a   Hatakeyama, T ^a   Shinohe, T ^a   Kojima, K ^b   Nishizawa, S ^b   Ohashi, H ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Floating layer; FOM (Figure of Merit); SBD; Super SBD

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; MICROMETERS; SILICON CARBIDE;

FIGURE OF MERIT (FOM); FLOATING LAYER;

SCHOTTKY BARRIER DIODES;

EID: 37849006796     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1175     Document Type: Conference Paper

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