High channel mobility in inversion layer of SiC MOSFETs for power switching transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2008-2011

  Yang, Hiroshi ^a   Hirao, Taichi ^a   Kimoto, Tsunenobu ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

(112 0) face; 15R SIC; 4H SIC; 6H SIC; Anisotropy; Inversion channel mobility; MOSFET; Near interfacial oxide traps; Threshold voltage

Indexed keywords

ANISOTROPY; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); ION IMPLANTATION; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBSTRATES; THERMOOXIDATION;

HIGH CHANNEL MOBILITY; NEAR INTERFACIAL OXIDE TRAPS;

MOSFET DEVICES;

EID: 0033690229     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2008     Document Type: Article

References (17)

1. A. K. Agarwal, J. B. Casady, L. B. Rowland, W. F. Valek, M. H. White and C. D. Brandt: IEEE Electron Device Lett. 18 (1997) 586.
2. J. Spitz, M. R. Melloch, J. A. Cooper, Jr. and M. A. Capano: IEEE Electron Device Lett. 19 (1998) 100.
3. D. Peters, R. Schörner, P. Friedrichs, J. Völkl, H. Mitlehner and D. Stephani: IEEE Trans. Electron Devices 46 (1999) 542.
4. R. Schömer, P. Friedrichs, D. Peters and D. Stephani: IEEE Electron Device Lett. 20 (1999) 241.
5. J. W. Palmour, S. T. Allen, R. Singh, L. A. Lipkin and D. G. Waltz: Inst. Phys. Conf. Ser. 142 (1996) 813.
6. M. Schadt, G. Pensl, R. P. Devaty, W. J. Choyke, R. Stein and D. Stephani: Appl. Phys. Lett. 65 (1994) 3120.
7. W. J. Schaffer, G. H. Negley, K. G. Irvine and J. W. Palmour: Mater. Res. Soc. Symp. Proc. 339 (1994) 595.
8. K. Ueno, R. Asai and T. Tsuji: IEEE Electron Device Lett. 19 (1998) 244.
9. K. Hara: Mater. Sci. Forum 264-268 (1998) 901.
10. J. Tan, J. A. Cooper, Jr. and M. R. Melloch: IEEE Electron Device Lett. 19 (1998) 487.
11. D. L. Barrett and R. B. Campbell: J. Appl. Phys. 38 (1967) 53.
12. V. V. Afanasev, M. Bassler, G. Pensl and M. Schulz: Phys. Status Solidi (3) 162 (1997) 321.
13. H. Matsunami and T. Kimoto: Mater. Sci. & Eng. R20 (1997) 125.
14. J. N. Shenoy, M. K. Das, J. A. Cooper, Jr., M. R. Melloch and J. W. Palmour: J. Appl. Phys. 79 ( 1994) 3042.
15. G. Ghibaudo: Electron. Lett. 24 (1988) 543.
16. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano and Y. Sugawara: IEEE Electron Device Lett. 20 (1999) 611.
17. T. Kimoto, T. Yamamoto, Z. Y. Chen, H. Yano and H. Matsunami: Ext. Abstr. Int. Conf. Silicon Carbide and Related Materials 1999, TuB7.