Nitridation of silicon-dioxide films grown on 6H silicon carbide

IEEE Electron Device Letters

Volumn 18, Issue 5, 1997, Pages 175-177

  Dimitrijev, Sima ^a,b   Li, Hui Feng ^a,b   Harrison, H Barry ^b   Sweatman, Denis ^b  

^a IEEE   (Australia)

^b GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DIOXIDE FILMS;

ANNEALING; FILM GROWTH; INTERFACES (MATERIALS); NITRIDING; SILICA; SILICON CARBIDE;

SEMICONDUCTING FILMS;

EID: 0031146794     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.568752     Document Type: Article

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