Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 3-6

  Nakabayashi, M ^a   Fujimoto, T ^a   Katsuno, M ^a   Ohtani, N ^a   Tsuge, H ^a   Yashiro, H ^a   Aigo, T ^a   Hoshino, T ^a   Hirano, H ^a   Tatsumi, K ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

100Mm diameter SiC substrate; Lateral enlargement growth; Thermoelastic stress

Indexed keywords

CRACKS; MECHANICAL STABILITY; OPTIMIZATION; THERMOELASTICITY;

CRACK FREE; LARGE DIAMETER; LATERAL ENLARGEMENTS; MICROPIPE DENSITY; MICROPIPES; SIC SUBSTRATES; STRESS COMPONENT; THERMOELASTIC STRESS;

SILICON CARBIDE;

EID: 63849187444     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (10)

1. St.G. Müller, R.C. Glass, H.M. Hobgood, V.F. Tsvetkov, M. Brady, D. Henshall, D. Malta, R. Singh, J. Palmour, C.H. Carter, Jr, Mater. Sci. Eng. B80 (2001), p. 327
2. A. Gupta, E. Semenas, E. Emorhokpor, J. Chen, I. Zwieback, A. Souzis, T. Anderson, Mater. Sci. Forum Vol. 527-529 (2006), p. 43
3. S. Ha, G.S. Rohrer, M. Skowronski, V.D. Heydemann, D.W. Snyder, Mater. Sci. Forum Vol. 338-342 (2000), p. 67
4. R.-H. Ma, H. Zhang, M. Dudley, V. Prasad, J. Crystal growth Vol. 258 (2003), p. 318
5. J. Takahashi, M. Kanaya and Y. Fujiwara: J. Cryst. Growth Vol. 135 (1994), p. 61
6. M. Nakabayashi, et al., Mater. Sci. Forum Vol. 527-529 (2006), pp. 699
7. Z. Li and R. C. Bradt, Int. J. High Tech. Ceram., Vol. 4 (1988), p. 1
8. M. Neuberger, MRS Bulletin, Vol. 4 (1969), p. 365
9. H. Jacobson, R. Yakimova, P. Råback, et al., Mater. Sci. Forum Vol. 389-393 (2002), p. 39
10. S. Nishizawa, T. Kato Y. Kitou, N. Oyanagi, F. Hirose, H. Yamaguchi, W. Bahng, K. Arai, Mater. Sci. Forum Vol. 457-460 (2004), p. 29