Characterization of 4H-SiC MOSFETs formed on the different trench sidewalls

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1293-1296

  Nakao, H ^a   Mikami, H ^a   Yano, H ^a   Hatayama, T ^a   Uraoka, Y ^a   Fuyuki, T ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Channel mobility; Channel plane; Trench sidewall; UMOSFET

Indexed keywords

ANGLE MEASUREMENT; CHANNEL ESTIMATION; ELECTRON MOBILITY; SILICON CARBIDE; SUBSTRATES;

CHANNEL MOBILITY; CHANNEL PLANES; TRENCH SIDEWALLS; TRENCH TAPER ANGLE;

MOSFET DEVICES;

EID: 37849012971     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1293     Document Type: Conference Paper

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