Development of large area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky rectifiers

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 931-934

  Hull, Brett A ^a   Sumakeris, Joseph J ^a   O'Loughlin, Michael J ^a   Zhang, Qingchun ^a   Richmond, Jim ^a   Powell, Adrian ^a   Paisley, Mike ^a   Tsvetkov, Valeri ^a   Hefner, Allen ^b   Rivera, Angel ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

High frequency; High voltage; Junction Barrier Schottky diode; Low 1C substrate

Indexed keywords

ELECTRIC RECTIFIERS; HVDC POWER TRANSMISSION; RECTIFYING CIRCUITS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SUBSTRATES;

BLOCKINGS; DC CHARACTERISTICS; HIGH FREQUENCY HF; HIGH-VOLTAGES; JUNCTION BARRIER SCHOTTKY; JUNCTION BARRIER SCHOTTKY DIODES; LOW 1C SUBSTRATE; REVERSE RECOVERY; SCHOTTKY RECTIFIERS; STORED CHARGE;

SILICON CARBIDE;

EID: 63849086283     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.931     Document Type: Conference Paper

References (3)

1. B. A. Hull, J. J. Sumakeris, M. K. Das, J. T. Richmond, and J. Palmour, Mater. Sci. Forum, 556-557, 895 (2007).
2. H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, Mater. Sci. Forum, 389-393, 1259 (2002).
3. R. Leonard, Y. Khlebnikov, A. R. Powell, C. Basceri, M. F. Brady, I. Khlebnikov, J. R. Jenny, D. P. Malta, M. J. Paisley, V. F. Tsvetkov, R. Zilli, E. Deyneka, H. McD. Hobgood, and C. H. Carter, to be presented at the 2007 International Conference of SiC and Related Materials, Oct. 14-19, 2007, Otsu, Japan.