SiC integrated MOSFETs

Physica Status Solidi (A) Applied Research

Volumn 162, Issue 1, 1997, Pages 369-388

  Onda, S ^a   Kumar, R ^a   Hara, K ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SUPERLATTICES;

BLOCKING VOLTAGE; ON STATE RESISTANCE; TRENCH MOSFET;

SILICON CARBIDE;

EID: 0031189324     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199707)162:1<369::AID-PSSA369>3.0.CO;2-4     Document Type: Article

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