Increased channel mobility in 4H-SiC UMOSFETs using on-axis substrates

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 807-810

  Yano, H ^a   Nakao, H ^a   Hatayama, T ^a   Uraoka, Y ^a   Fuyuki, T ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Channel mobility; Off angle; On axis; Trench; UMOSFET

Indexed keywords

SUBSTRATES; TRENCHING;

CHANNEL MOBILITY; INVERSION CHANNELS; OFF-ANGLE; ON-AXIS; TRENCH SIDEWALLS; UMOSFET;

SILICON CARBIDE;

EID: 38449090971     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.807     Document Type: Conference Paper

References (4)

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4. H. Nakao, H. Mikami, H. Yano, T. Hatayama, Y. Uraoka and T. Fuyuki: Mater. Sci. Forum Vol. 527-529 (2006), p.1293