Fabrication and performance of 1.2 kV, 12.9 mΩcm2 4H-SiC epilayer channel MOSFET

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1285-1288

  Tarui, Y ^a   Watanabe, T ^a   Fujihira, K ^a   Miura, N ^a   Nakao, Y ^a   Imaizumi, M ^a   Sumitani, H ^a   Takami, T ^a   Ozeki, T ^a   Oomori, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Breakdown voltage; Epilayer channel; MOSFET; ON resistance

Indexed keywords

CARRIER MOBILITY; ELECTRIC BREAKDOWN; OPTIMIZATION; SILICON CARBIDE;

AVALANCHE BREAKDOWN; EFFECTIVE CHANNEL MOBILITY; EPILAYER CHANNELS; ON-RESISTANCE;

MOSFET DEVICES;

EID: 38049035552     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1285     Document Type: Conference Paper

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