Structure analysis of in-grown stacking faults and investigation of the cause for high reverse current of 4H-SiC schottky barrier diode

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 963-966

  Harada, Shin ^a   Namikawa, Yasuo ^a   Sugie, Ryuichi ^b  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b TORAY RESEARCH CENTER INC   (Japan)

Author keywords

Cathodoluminescence; Cross sectional transmission electron microscopy; In grown stacking fault; Reverse current; Schottky barrier diodes

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICON CARBIDE; STACKING FAULTS;

BARRIER HEIGHT LOWERING; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; IN-GROWN STACKING FAULTS; REVERSE CURRENTS; STRUCTURE ANALYSIS; STRUCTURE-RELATED;

SCHOTTKY BARRIER DIODES;

EID: 63849096003     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.963     Document Type: Conference Paper

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