Silicon carbide power devices for high temperature, high power density switching applications

IEEE Conference Record of Power Modulator Symposium

Volumn , Issue , 1996, Pages 18-21

  Burke, T ^a   Xie, K ^a   Flemish, J R ^a   Singh, H ^a   Podlesak, T ^a   Zhao, J H ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRONICS PACKAGING; ENERGY GAP; HEAT LOSSES; HIGH TEMPERATURE APPLICATIONS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EXPANSION;

SILICON CARBIDE POWER DEVICES; THERMAL EXPANSION COEFFICIENT MISMATCHES;

THYRISTORS;

EID: 0030382943     PISSN: 10768467     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)