Simulation, fabrication and characterization of 4h-SiC floating junction schottky barrier diodes (Super-SBDs)

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 881-884

  Ota, C ^a   Nishio, J ^a   Hatakeyama, T ^a   Shinohe, T ^a   Kojima, K ^b   Nishizawa, S ^b   Ohashi, H ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Floating layer; FOM (Figure of Merit); SBD; Super SBD

Indexed keywords

FABRICATION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

DEVICE SIMULATIONS; FABRICATION AND CHARACTERIZATIONS; FIGURE OF MERITS; FLOATING LAYER; OPTIMIZED DEVICES; SPECIFIC-ON RESISTANCE; SUPER-SBD; WORLD RECORDS;

POWER SEMICONDUCTOR DIODES;

EID: 38449096325     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.881     Document Type: Conference Paper

References (6)

1. I. Omura, et al.: US Patent. 6, 037, 632 (2000)
2. K. Adachi, et al.: Mat. Sci. For. Vol.433-436 (2003), p.887
3. T. Hatakeyama, et al.: Mat. Sci. For. Vol.483-485 (2005), p.921
4. B. J. Baliga: IEEE Electron Device Lett. Vol.10 (1989), p.455
5. C. Ota, et al.: Mat. Sci. For. Vol.527-529 (2006), p.1175
6. A. O. Konstantinov, et al.: J. Electron. Mat Vol.27 (1998), p.335