The planar 6H-SiC ACCUFET: A new high-voltage power MOSFET structure

IEEE Electron Device Letters

Volumn 18, Issue 12, 1997, Pages 589-591

  Shenoy, Praveen M ^a   Baliga, B Jayant ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC RESISTANCE; SEMICONDUCTOR DEVICE STRUCTURES;

CHANNEL MOBILITY; GATE OXIDE; MOSFET STRUCTURE;

MOSFET DEVICES;

EID: 0031357365     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.644080     Document Type: Article

References (13)

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8. (a) M. Ruff, H. Mitlehner, and R. Helbig, "SiC devices: Physics and numerical simulation," IEEE Trans. Electron Devices, vol. 41, pp. 1040-1054, June 1994
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