Low on-resistance in normally-off 4H-SiC accumulation MOSFET

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 817-820

  Okuno, Eiichi ^a   Endo, Takeshi ^a   Matsuki, Hideo ^a   Sakakibara, Toshio ^a   Tanaka, Hiroaki ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

Accumulation MOSFET; Epitaxial layer channel (epi channel); Normally off

Indexed keywords

CHANNEL ESTIMATION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; EPITAXIAL LAYERS; SILICON CARBIDE;

CHANNEL MOBILITY; EPI-CHANNELS; EPITAXIAL LAYER CHANNEL (EPI-CHANNEL);

MOSFET DEVICES;

EID: 35148865245     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.817     Document Type: Conference Paper

References (7)

1. S.Onda, R.Kumar and K.Hara: Phys. Stat. Sol. (a), Vol.162 (1997), p.369
2. G.Y.Chung, C.C.Tin, J.R.Williams, K.McDonald, R.K.Chanana, R.A.Weller, S.T.Pantelides, L.C.Feldman, O.W.Holland, M.K.Das and J.W.Palmour: IEEE Electron Device Lett., Vol.22 (2001), p.176
3. L.A.Lipkin, M.K.Das and J.W.Palmour: Mater. Sci. Forum Vols.389-393 (2002), p.985
4. V.V.Afanasev, M.Bassler, G.Pensel and M.Schulz: Phys. Stat. Sol. (a), Vol.162 (1997), p.321
5. H.Yano, T.Hirao, T.Kimoto, H.Matsunami, K.Asano and Y.Sugawara: IEEE Electron Device Lett. Vol.20 (1999), p.611
6. T.Hirao, H.Yano, T.Kimoto, H.Matsunami and H.Shiomi: Mater. Sci. Forum Vols.389-393 (2002), p. 1065
7. J.Tan, J.A.Cooper, Jr. and M.R.Melloch: IEEE Electron Device Lett. Vol.19 (1998), p.487