High-voltage double-implanted power MOSFET's in 6H-SiC

IEEE Electron Device Letters

Volumn 18, Issue 3, 1997, Pages 93-95

  Shenoy, Jayarama N ^a,b   Cooper Jr , James A ^a,b   Melloch, Michael R ^a,b  

^a PURDUE UNIVERSITY   (United States)

^b IEEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CALCULATIONS; COMPUTER SIMULATION; ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

INVERSION CHANNEL; SEMICONDUCTOR MATERIAL SYSTEM;

MOSFET DEVICES;

EID: 0031103557     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.556091     Document Type: Article

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